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 PD-94150B
HFB25HJ20
FRED
Features
* * * * * Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount
Ultrafast, Soft Recovery Diode
VR = 200V IF(AV) = 25A trr = 35ns
Description
These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
Absolute Maximum Ratings
Parameter
VR IF(AV) IFSM PD @ TC = 25C TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, Q TC = 106C Single Pulse Forward Current, R TC = 25C Maximum Power Dissipation Operating Junction and Storage Temperature Range
Max.
200 25 150 70 -55 to +150
Units
V A W C
Note: Q D.C. = 50% rect. wave R 1/2 sine wave, 60 Hz , P.W. = 8.33 ms
CASE STYLE
CATHODE
SMD-0.5
ANODE
ANODE
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7/9/01
HFB25HJ20
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
VBR VF Cathode Anode Breakdown Voltage Forward Voltage See Fig. 1
Min. Typ. Max. Units
200 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.8 -- 1.18 0.94 1.07 1.19 0.88 10 250 78 -- A A pF nH V V
Test Conditions
IR = 100A IF = 25A, TJ =-55C IF = 10A, TJ = 25C IF = 25A, TJ = 25C IF = 50A, TJ = 25C IF = 25A, TJ =125C VR = VR Rated VR = VR Rated, TJ = 125C VR = 200V Measured from center of cathod pad to center of anode pad See Fig. 2
IR
Reverse Leakage Current See Fig. 2 Junction Capacitance, See Fig. 3 Series Inductance
-- -- -- --
CT LS
Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
t rr trr1 trr2 IRRM1 IRRM2 Q rr1 Q rr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb
Min.
-- -- -- -- -- -- -- -- --
Typ. Max. Units
-- 28 43 3.9 6.1 61 146 820 1560 35 -- -- -- -- -- -- -- -- ns ns
Test Conditions
IF = 1.0A,VR = 30V, dif/dt = 200A/s TJ = 25C See Fig. TJ = 125C 5 IF = 25A TJ = 25C See Fig. A A TJ = 125C 6 VR = 160V TJ = 25C See Fig. nC TJ = 125C 7 dif/dt = 200A/s nC TJ = 25C See Fig. A/s 8 A/s TJ = 125C
Thermal - Mechanical Characteristics
Parameter
RthJC Wt Junction-to-Case Weight
Typ.
-- 1.0
Max.
1.76 --
Units
C/W g
2
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HFB25HJ20
100
10
125C
Reverse Current - I R (A)
1
100C
0.1
75C
0.01
Instantaneous Forward Current - I F (A)
25C
0.001
0.0001 0 40 80 120 160 200
10
Reverse Voltage - V R (V)
Fig. 2 - Typical Reverse Current Vs. Reverse Voltage
1000
Junction Capacitance - C T (pF)
Tj = 125C
Tj = 25C
T J = 25C
100
Tj = -55C
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10 0 40 80 120 160 200
Forward Voltage Drop - V F (V)
Reverse Voltage - V R (V)
Fig. 1 - Maximum Forward Voltage Drop Vs. Instantaneous Forward Current
10
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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HFB25HJ20
50 VR = 160V TJ = 125C TJ = 25C 40 100
IF = 25A
IF = 50A
IRRM - ( A )
trr - ( ns )
IF = 12.5A
10
IF = 12.5A IF = 25A
30
IF = 50A
VR = 160V TJ = 125C TJ = 25C 20 100 1000 1 100 1000
dif / dt - ( A / s )
dif / dt - ( A / s )
Fig. 5 - Typical Reverse Recovery Vs. dif/dt,
Fig. 6 - Typical Recovery Current Vs. dif/dt,
1000
10000
IF = 12.5A
di ( rec )M / dt - ( A / s )
IF = 25A IF = 12.5A
IF = 50A IF = 50A
IF = 25A
Qrr - ( nC )
100
1000
VR = 160V TJ = 125C TJ = 25C 10 100 1000
VR = 160V TJ = 125C TJ = 25C 100 100 1000
dif / dt - ( A / s )
dif / dt - ( A / s )
Fig. 7 - Typical Stored Charge Vs. dif/dt
Fig. 8 - Typical di(rec)M/dt Vs. dif/dt
4
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HFB25HJ20
3
IF
t rr ta tb
4
R E V E R S E R E C O V E R Y C IR C U IT
V R = 2 00 V
0 Q rr
2
I RRM
0.5 I R R M di(rec)M /dt
5
0.01 L = 70H D .U .T. D d if/d t A D JU S T G IR F P 2 50 S
1
0.75 I R R M di f /dt
4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr
1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
Case Outline and Dimensions -- SMD-0.5
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01
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